Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography

Atom Probe Tomography 2012

(2012) Thomas F. Kelly et al.   Annual Review of Materials Research

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

(2012) F. Panciera et al.   APPLIED PHYSICS LETTERS

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

(2012) H. Takamizawa et al.   APPLIED PHYSICS LETTERS

Advance in multi-hit detection and quantization in atom probe tomography

(2012) G. Da Costa et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Three-Dimensional Elemental Analysis of Commercial 45 nm Node Device with High-$k$/Metal Gate Stack by Atom Probe Tomography

(2011) Koji Inoue et al.   Applied Physics Express

Channel Dopant Distribution in Metal–Oxide–Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography

(2011) Hisashi Takamizawa et al.   Applied Physics Express

Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion

(2011) Y. Shimizu et al.   APPLIED PHYSICS LETTERS

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

(2011) H. Takamizawa et al.   APPLIED PHYSICS LETTERS

Atom-probe for FinFET dopant characterization

(2011) A.K. Kambham et al.   ULTRAMICROSCOPY

Broadening the applications of the atom probe technique by ultraviolet femtosecond laser

(2010) K. Hono et al.   ULTRAMICROSCOPY

Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

(2009) K. Inoue et al.   APPLIED PHYSICS LETTERS

Dopant distributions in n-MOSFET structure observed by atom probe tomography

(2009) K. Inoue et al.   ULTRAMICROSCOPY

Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique

(2008) Koji Inoue et al.   APPLIED PHYSICS LETTERS

Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe

(2008) K. Inoue et al.   APPLIED PHYSICS LETTERS