4.5 Article

High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance

期刊

APPLIED PHYSICS EXPRESS
卷 6, 期 2, 页码 -

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IOP PUBLISHING LTD
DOI: 10.7567/APEX.6.022102

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资金

  1. EU through the Optoneuro project [249867]
  2. Enterprise Ireland/European Research Development Fund [PC/2009/418]
  3. EPSRC [EP/I012591/1, EP/G042330/1, EP/H019324/1] Funding Source: UKRI
  4. Engineering and Physical Sciences Research Council [EP/I012591/1, EP/G042330/1, EP/H019324/1] Funding Source: researchfish

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InGaN-based micro-light-emitting diodes (mu-LEDs) emitting at 470nm and composed of micropixels each with controlled shaping achieves directed light output with an angular full width at half maximum of 48 degrees. The reflected light from the mesa sidewalls is azimuthally polarized. The small signal bandwidth of an individual mu-LED is >500 MHz. A cluster of 14 mu-LEDs is used to achieve a large signal data transfer rate of 500 Mbps in a form which is compatible with communication over plastic optical fibre. (C) 2013 The Japan Society of Applied Physics

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