4.5 Article

Epitaxial Integration of (100) Bi4Ti3O12 with (0001) ZnO through Long-Range Lattice Matching

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APPLIED PHYSICS EXPRESS
卷 5, 期 8, 页码 -

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JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.5.085801

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  1. New Century Excellent Talents in University [NCET-10-0662]
  2. International Science and Technology Cooperation Project of Hubei Province [2010BFA017]
  3. International Science and Technology Cooperation Program of China [2011DFA52650]

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We report on an epitaxial relationship with a long-range lattice matching between the (100) plane of Bi-layered structure Bi4Ti3O12 (BiT) and the (0001) plane of wurtzite structure ZnO: BiT(100)[001] parallel to ZnO(0001)< 01 (1) over bar0 >. Epitaxial (100)-oriented Ho-doped BiT thin film with the composite of Bi3.6Ho0.4Ti3O12 (BHT) was integrated with (0001)-oriented Al-doped ZnO (AZO) layer buffered c-sapphire substrate by pulsed laser deposition. X-ray diffraction and transmission electron microscopy characterizations validated the epitaxial orientation relationship, which was BHT(100)[001] parallel to AZO(0001)< 01 (1) over bar0 >. The heteroepitaxy of (100) BiT with (0001) ZnO through long-range lattice matching opens the way to the study of novel BiT/ZnO-based ferroelectric wide-band-gap semiconductor heterostructure. (C) 2012 The Japan Society of Applied Physics

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