Article
Physics, Applied
Po-Cheng Tsai, Hon-Chin Huang, Chen-Tu Chiang, Chao-Hsin Wu, Shih-Yen Lin
Summary: The growth of MoS2 layer on graphene surfaces can enhance the field-effect mobility of transistors, acting as an efficient passivation layer for the graphene channel. This enhancement is observed even with only a mono-layer MoS2 passivation layer.
APPLIED PHYSICS EXPRESS
(2021)
Article
Chemistry, Multidisciplinary
Xiaohe Huang, Chunsen Liu, Senfeng Zeng, Zhaowu Tang, Shuiyuan Wang, Xiaozhang Chen, David Wei Zhang, Peng Zhou
Summary: The 2D ultrathin MBCFET with 2 nm/2 nm MoS2 channels demonstrates higher normalized drive current and lower leakage current compared to the latest seven-level-stacked Si MBCFET.
ADVANCED MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Sirri Batuhan Kalkan, Emad Najafidehaghani, Ziyang Gan, Jan Drewniok, Michael F. F. Lichtenegger, Uwe Huebner, Alexander S. S. Urban, Antony George, Andrey Turchanin, Bert Nickel
Summary: Adding an ultrathin coc passivation layer on the semiconductor/gate dielectric interface can reduce the interface trap density and enhance the electrical performance and photoresponsivity of MoS2 devices.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Physics, Applied
Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Summary: The interface properties and energy band alignment of SiO2/GaN MOS structures on N-polar and Ga-polar GaN substrates were investigated, revealing differences in thermal stability and electrical performance. Caution is needed when using N-polar GaN substrates for MOS device fabrication due to increased gate leakage current.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Masaya Nishinaka, Hiroaki Jinno, Yasutoshi Jimbo, Sunghoon Lee, Jiabin Wang, Wonryung Lee, Tomoyuki Yokota, Takao Someya
Summary: Organic electrochemical transistors (OECTs) are widely used for monitoring electrophysiological activities, with the transconductance of OECTs using PEDOT:PSS channel layer being proportional to the channel thickness, which is essential for forming a thick channel layer; spray coating technique can successfully form a thick and uniform PEDOT:PSS layer, resulting in a high-transconductance and ultraflexible OECT with a sufficiently rapid response.
Article
Materials Science, Multidisciplinary
Qinghai Zhu, Yexin Chen, Xiaodong Zhu, Yijun Sun, Zhiyuan Cheng, Jing Xu, Mingsheng Xu
Summary: We report the excellent photoresponse performance of a vertical PtSe2/ultrathin Al2O3/Ge photodetector under near-infrared illumination. The PtSe2 layer is formed by directly selenizing a Pt film deposited on Al2O3/Ge. The ultrathin Al2O3 passivation layer effectively weakens carrier recombination and enhances the device's responsivity and response speed.
SCIENCE CHINA-MATERIALS
(2023)
Article
Physics, Applied
Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova, Tamotsu Hashizume
Summary: The article focuses on the characteristics of gallium nitride materials and the impact of surface states and interface states on device performance, as well as methods to reduce their effects, and discusses a new capacitance-voltage technique. Future development directions are also proposed.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Ryun Na Kim, Hye Won Yun, Jinho Lee, Woo-Byoung Kim
Summary: Analysis of the interfacial and electrical properties of Al2O3/SiO2/Si revealed that the thickness of the SiO2 layer affects interfacial defects and suboxide density, which in turn impacts dipole and flat-band voltage. Additionally, variations in SiO2 layer thickness result in differences in slow state density, fixed oxide charge density, and interface state density. Postmetallization annealing (PMA) further reduces these densities. As the thickness of the SiO2 layer increases, the flat-band voltages decrease after PMA, indicating a reduction in interfacial defects and suboxides.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Optics
Hong Li, Cheng Zhang, Xian Chao Liu, Peng Yu, Wei Dong Chen, Zheng Wei Xie, Ming Jun Tang, Jie Zheng, Ling Li
Summary: In this study, wafer-scale Al-SiO2 stack metasurfaces were experimentally fabricated to achieve perfect ultra-broadband absorption. The absorption for Al-SiO2 stack metasurfaces reached up to 98% for the wavelength range from ultraviolet to near-infrared. The results demonstrated that the absorption performance of Al-SiO2 stack metasurfaces is superior to other metal-based stack metasurfaces.
Article
Energy & Fuels
Hao Liu, Ya Wang, Liming Dong, Haiou Wang, Zhengzhong Zhang
Summary: A new industrially feasible fabrication method for stack passivation layers PERC solar cells was successfully developed based on existing production line, optimizing manufacturing parameters to achieve the best passivation effect, and introducing a new thin low refractive index SiNx capping layer for improved performance. The efficiency of the industrial stack passivation layers PERCs with the new thin low refractive index SiNx capping layer reached 22.15%.
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
(2021)
Article
Energy & Fuels
Xingru Tan, Ran Chen, Fiacre Emile Rougieux
Summary: This article observes significant degradation of surface passivation in Czochralski silicon lifetime samples, with recovery only seen in samples passivated by a single silicon nitride layer. Capacitance-voltage measurements show that surface degradation results from changes in interface defect density and fixed charge density. Two separate degradation channels contribute to the degradation in surface passivation, with the decrease in interface defect density leading to a recovery of surface passivation.
IEEE JOURNAL OF PHOTOVOLTAICS
(2021)
Article
Chemistry, Multidisciplinary
Haihui Lan, Yiling Li, Jinglu Liu, Wenchao Hu, Xiaohui Zhu, Yuxin Ma, Lixin Niu, Zehao Zhang, Shuangfeng Jia, Linyang Li, Yunxu Chen, Jianbo Wang, Mengqi Zeng, Lei Fu
Summary: Ultrathin Ge(110) single crystals with semiconductive properties were successfully synthesized via gallium-associated self-limiting growth, exhibiting excellent characteristics for potential applications in electronics and optoelectronics.
Article
Physics, Applied
Shota Nunomura, Hiroyuki Ota, Toshifumi Irisawa, Kazuhiko Endo, Yukinori Morita
Summary: The defect generation and recovery in a high-k HfO2/SiO2/Si stack for MOSFETs were studied at each fabrication step. The measurements of carrier lifetime indicated that defects were generated during the formation of the HfO2/SiO2 stack, as well as post-deposition annealing (PDA) and O-2 plasma treatment, while they were mostly recovered by forming gas annealing (FGA).
APPLIED PHYSICS EXPRESS
(2023)
Article
Physics, Applied
Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Lee, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu, Min-Hung Lee
Summary: This study investigates the instability threshold voltage (V-T) and retention loss of read-after-write in ferroelectric field effect transistors (FeFETs) under high-speed operation. The mechanisms of charge trapping and depolarization field (E-dep) are discovered and related to surface potential and coercive field (E-C). Trapped charge can be effectively detrapped by opposite polarity stimulation and validated through technology computer-aided design modeling. In addition, the study reveals that E-dep becomes severe with ferroelectric HfZrO2 (FE-HZO) thinning due to unstable low-V-T state at a gate voltage (V-G) of 0 V. The utilization of tunable base voltage (V-base) compensates for E-dep-based polarization degradation, and a stable low-V-T read-after-write is experimentally demonstrated for a 5-nm-thick HZO FeFET by the opposite polarity detrapping scheme hybrid with simultaneous V-base optimization. This research result provides the feasibility for scaling down FeFETs for future nonvolatile memory applications.
APPLIED PHYSICS LETTERS
(2022)
Article
Multidisciplinary Sciences
Lei Liu, Taotao Li, Liang Ma, Weisheng Li, Si Gao, Wenjie Sun, Ruikang Dong, Xilu Zou, Dongxu Fan, Liangwei Shao, Chenyi Gu, Ningxuan Dai, Zhihao Yu, Xiaoqing Chen, Xuecou Tu, Yuefeng Nie, Peng Wang, Jinlan Wang, Yi Shi, Xinran Wang
Summary: This study reports the successful nucleation of bilayer molybdenum disulfide (MoS2) on c-plane sapphire, achieving uniformity in the nucleation process. The design of atomic terrace height on c-plane sapphire allows for an edge-nucleation mechanism and the coalescence of MoS2 domains into continuous, centimeter-scale films. Field-effect transistor devices based on bilayer MoS2 channels show improved mobility and reduced variation compared to monolayer films.
Article
Physics, Applied
Dong Wang, Takayuki Maekura, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima
APPLIED PHYSICS LETTERS
(2015)
Article
Physics, Applied
Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang
JAPANESE JOURNAL OF APPLIED PHYSICS
(2016)
Article
Materials Science, Multidisciplinary
Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
Article
Engineering, Electrical & Electronic
Keisuke Yamamoto, Hayato Okamoto, Dong Wang, Hiroshi Nakashima
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2017)
Article
Engineering, Electrical & Electronic
Yuta Nagatomi, Tomoki Tateyama, Shintaro Tanaka, Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Liwei Zhao, Dong Wang, Hiroshi Nakashima
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2017)
Article
Engineering, Electrical & Electronic
T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, K. Hamaya
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2017)
Article
Engineering, Electrical & Electronic
Y. Nagatomi, T. Tateyama, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2017)
Article
Engineering, Electrical & Electronic
T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, K. Yamamoto, H. Nakashima, D. Wang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2017)
Article
Engineering, Electrical & Electronic
K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, H. Nakashima
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2018)
Article
Physics, Applied
Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
JOURNAL OF APPLIED PHYSICS
(2018)
Article
Physics, Applied
Takayuki Maekrua, Taiki Goto, Kohei Nakae, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang
JAPANESE JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Keisuke Yamamoto, Kohei Nakae, Dong Wang, Hiroshi Nakashima, Zhongying Xue, Miao Zhang, Zengfeng Di
JAPANESE JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Ryusei Oka, Keisuke Yamamoto, Hiroshi Akamine, Dong Wang, Hiroshi Nakashima, Shigeomi Hishiki, Keisuke Kawamura
JAPANESE JOURNAL OF APPLIED PHYSICS
(2020)
Article
Nanoscience & Nanotechnology
Wei-Chen Wen, Yuta Nagatomi, Hiroshi Akamine, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
Proceedings Paper
Electrochemistry
Hiroshi Nakashima, Hayato Okamoto, Keisuke Yamamoto, Dong Wang
SEMICONDUCTOR PROCESS INTEGRATION 10
(2017)