Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

出版年份 2010 全文链接

标题

Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

作者

关键词

-

出版物

Applied Physics Express

Volume 3, Issue 12, Pages 121001

出版商

IOP Publishing

发表日期

2010-11-19

DOI

10.1143/apex.3.121001

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