4.5 Article

Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices

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APPLIED PHYSICS EXPRESS
卷 3, 期 9, 页码 -

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JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.3.093001

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  1. Ministry of Education, Culture, Sports, Science and Technology (MEXT)
  2. Japan Science and Technology Agency
  3. Semiconductor Technology Academic Research Center (STARC)
  4. Japan Society for the Promotion of Science (JSPS)

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We perform a detailed comparison of the nonlocal magnetoresistance (MR) curve with the local MR ones in Si-based lateral spin-valve devices with epitaxial ferromagnetic Fe3Si contacts, where the local MR originates from the anisotropic MR of the ferromagnetic contacts. We find that the nonlocal MR signals clearly depend on the magnetization reversal of the contacts, and they show positive or negative peak values when the magnetic configuration between two ferromagnetic contacts becomes nearly anti-parallel. These features mean that the obtained nonlocal MR signals can be distinguished from the suspicious signals, indicating a reliable result of the spin transport in Si. (c) 2010 The Japan Society of Applied Physics

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