期刊
APPLIED PHYSICS EXPRESS
卷 3, 期 10, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.3.101002
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资金
- Solid State Lighting and Energy Center at University of California Santa Barbara (UCSB)
- National Nanotechnology Infrastructure Network
Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors were demonstrated using a regrown n(+)-GaN contact layer. An ohmic contact resistance of 0.25 Omega.mm was obtained with an 80-nm-thick Si-doped regrown GaN contact layer deposited by metal organic chemical vapor deposition. Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors were demonstrated with a threshold voltage of +1.4 V and 2.0m Omega.cm(2) on-state resistances at +5 V of gate-source voltage. (C) 2010 The Japan Society of Applied Physics
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