High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

标题
High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique
作者
关键词
-
出版物
Applied Physics Express
Volume 3, Issue 4, Pages 041302
出版商
IOP Publishing
发表日期
2010-03-26
DOI
10.1143/apex.3.041302

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