High Mobility Exceeding 80 cm(2) V-1 s(-1) in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers

High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm(2) V-1 s(-1) with a resistivity of 2.8 x 10(-4) Omega cm, whereas the film with the lowest resistivity of 1.8 x 10(-4) Omega cm had a mobility of 60 cm(2) V-1 s(-1). (C) 2010 The Japan Society of Applied Physics