Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors

The first demonstration of the m-plane AlGaN/GaN heterojunction field-effect transistor was reported. This transistor exhibited enhancement-mode operation, with the threshold voltage of +2.0 V owing to the nonpolar AlGaN/GaN heterojunction. The maximum drain-source current density and the maximum transconductance were 130 mA/mm at a gate-source voltage (V(gs)) of +9V and 25 mS/mm at V(gs) = +8V, respectively. The on-to-off ratio was over 10(6). (C) 2009 The Japan Society of Applied Physics