期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 116, 期 3, 页码 941-945出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-014-8465-5
关键词
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资金
- National Key Basic Research Program of China [2011CB925603]
- Natural Science Foundation of China [61290305, 11374259]
A novel white light-emitting diode based on a large Stokes shift (similar to 200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Forster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band-band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.
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