Realization of transient memory-loss with NiO-based resistive switching device

标题
Realization of transient memory-loss with NiO-based resistive switching device
作者
关键词
-
出版物
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 109, Issue 2, Pages 349-352
出版商
Springer Nature
发表日期
2012-09-12
DOI
10.1007/s00339-012-7179-9

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More