期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 108, 期 3, 页码 761-764出版社
SPRINGER
DOI: 10.1007/s00339-012-6970-y
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- MHRD
Lead free (1-x)(K0.5Na0.5)NbO3-x(Ba0.9Sr0.1)(Zr0.1Ti0.9)O-3 [(1-x)KNN-xBSZT] (x=0,0.02,0.04 and 0.06) ceramic were synthesized by a solid-state reaction method and the effects of BSZT doping on the electrical properties of KNN have been studied. X-ray diffraction (XRD) indicates that all the samples have single-phase perovskite structure and addition of BSZT forms a morphotropic phase boundary (MPB) i.e. the coexistence of orthorhombic and tetragonal phase in the region 0.02a parts per thousand currency signxa parts per thousand currency sign0.04. Field emission scanning electron microscopy (FESEM) indicates the reduction in the grain size with the addition of BSZT. Small broadening in the dielectric peak arises at higher concentration of BSZT. The value of remnant polarization at x=0.04 is found to be higher than any other value of x except x=0 and also results in enhancement of dielectric constant at room temperature. Thereby it makes it useful for application at room temperature.
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