T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation

出版年份 2011 全文链接

标题

T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation

作者

关键词

-

出版物

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Volume 106, Issue 3, Pages 575-579

出版商

Springer Nature

发表日期

2011-12-14

DOI

10.1007/s00339-011-6712-6

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