GaN-nanowire-based dye-sensitized solar cells

GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO (x) core-shell structures, and we show that coating of GaN nanowires with a TiO (x) shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm(2) and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.