期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 98, 期 3, 页码 509-515出版社
SPRINGER
DOI: 10.1007/s00339-009-5485-7
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资金
- National Science Council (NSC) of Taiwan [NS 96-2112-M-018-007-MY3]
The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
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