期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 91, 期 3, 页码 467-472出版社
SPRINGER
DOI: 10.1007/s00339-008-4432-3
关键词
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The formation of single defects and defect complexes are investigated in Li, N co-doped ZnO by the first-principles plane wave method with projector augmented wave (PAW) pseudo-potential technology. We find that: (i) p-type conductivity could be achieved in single Li doped ZnO under an O-rich condition, since the formation energy of Li-Zn acceptor is much lower than the interstitial Li-i; (ii) the dual-acceptor complex Li-Zn-N-O is unlikely to form, and the good p-type conductivity is mainly attributed to the Li-Zn acceptor, even in Li, N co-doped ZnO; (iii) the additional introduction of N may help compensate the single Li-i donor defects under certain growth conditions, but its role in the p-type conductivity in ZnO remains to be clarified.
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