期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 94, 期 4, 页码 995-998出版社
SPRINGER
DOI: 10.1007/s00339-008-4883-6
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资金
- INHA UNIVERSITY [INHA-37474-1]
Using X-ray absorption near-edge structure spectroscopy (XANES), we investigate the local electronic structure of phosphorus (P) and its chemical valence in laser-ablated n-type (as-grown), and p-type (annealed) P-doped ZnO thin films. Both the P L (1)- and P L (2,3)-edge XANES spectra reveal that the valence state of P is 3- (P3-) in the p-type as well as in the n-type P-doped ZnO. However, the peak intensity is stronger in the former than that in the latter, suggesting that P replaces O (O2- sites with the P3-) after rapid thermal annealing. The Zn and O K-edges XANES spectra consistently demonstrate that, in the p-type state, P ions substitutionally occupy O sites in the ZnO lattice.
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