期刊
ANALYTICA CHIMICA ACTA
卷 827, 期 -, 页码 34-39出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.aca.2014.03.001
关键词
Zinc sulphide; Quantum dots; Mercury(II) ion; Photoelectrochemical sensor; p-n junction
资金
- National Natural Science Foundation of China [21275065, 21005031]
- Fundamental Research Funds for the Central Universities [JUSRP51314B]
- MOE & SAFEA for the 111 Project [B13025]
The discovery and development of photoelectrochemical sensors with novel principles are of great significance to realize sensitive and low-cost detection. In this paper, a new photoelectrochemial sensor based on the in situ formation of p-n junction was designed and used for the accurate determination of mercury(II) ions. Cysteine-capped ZnS quantum dots (QDs) was assembled on the surface of indium tin oxide (ITO) electrode based on the electrostatic interaction between Poly(diallyldimethylammonium chloride) (PDDA) and Cys-capped ZnS QDs. The in situ formation of HgS, a p-type semiconductor, on the surface of ZnS facilitated the charge carrier transport and promoted electron-hole separation, triggered an obviously enhanced anodic photocurrent of Cys-capped ZnS QDs. The formation of p-n junction was confirmed by P-N conductive type discriminator measurements and current-voltage (I-V) curves. The photoelectrochemical method was used for the sensing of trace mercuric (II) ions with a linear concentration of 0.01 to 10.0 mu M and a detection limit of 4.6 Chi 10 (9) mol/ L. It is expected that the present study can serve as a foundation to the application of p-n heterojunction to photoelectrochemical sensors and it might be easily extended to more exciting sensing systems by photoelectrochemistry. (C) 2014 Elsevier B.V. All rights reserved.
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