4.7 Article

Synthesis of nanocrystalline GaN from Ga2O3 nanoparticles derived from salt-assisted spray pyrolysis

期刊

ADVANCED POWDER TECHNOLOGY
卷 20, 期 1, 页码 29-34

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.apt.2008.10.005

关键词

Nanomaterials; Spray pyrolysis; Semiconductors; Luminescence

资金

  1. Ministry of Education, Culture, Sports, Science and Technology of Japan
  2. Japan Society for the Promotion of Science (JSPS).

向作者/读者索取更多资源

Gallium nitride (GaN) nanoparticles were successfully produced from nano-sized gallium oxide (Ga2O3) particles under a flow of ammonia gas. The gallium oxide nanoparticles were prepared by salt-assisted spray pyrolysis ( SASP). Highly crystalline Ga2O3 nanoparticles with an average diameter of approximately 10 nm were obtained at various temperatures when a flux salt (LiCl, 5 mol/l) was added to the precursor solution. The effects of the crystallinity of the Ga2O3 particles and nitridation time on transformation to GaN were characterized using X-ray diffraction and scanning/transmission electron microscopy. Highly crystalline GaN nanoparticles with a mean size of 23.4 nm and a geometric standard deviation of 1.68 nm were obtained when Ga2O3 nanoparticles with relatively low crystallinity were used as the starting material. The resulting GaN nanoparticles showed a photoluminescence peak at 364 nm under UV excitation at 254 nm. (c) 2008, The Society of Powder Technology Japan. Published by Elsevier BV and The Society of Powder Technology Japan. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据