4.8 Article

UV-Visible Spectroscopic Analysis of Electrical Properties in Alkali Metal-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors

期刊

ADVANCED MATERIALS
卷 25, 期 21, 页码 2994-3000

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201204236

关键词

alkali metal; Zinc tin oxide semiconductor; thin film transistor; burstein-moss effect; interstitial doping

资金

  1. Global Frontier Research Center for Advanced Soft Electronics of National Research Fund (NRF) [2011-0031635]
  2. Korea government (MEST)
  3. [2011-0018113]
  4. [2011-0026228]
  5. National Research Foundation of Korea [2011-0031635, 2011-0018113] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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