Article
Nanoscience & Nanotechnology
Raphael Boeckle, Masiar Sistani, Martina Bazikova, Lukas Wind, Zahra Sadre-Momtaz, Martien den Hertog, Corban G. E. Murphey, James F. Cahoon, Walter M. Weber
Summary: Metal-semiconductor heterostructures with geometrically reproducible and abrupt Schottky nanojunctions are crucial for emerging electronic technologies. By implementing a nanoscale Al-Si-Al heterostructure with single elementary, monocrystalline Al leads and sharp Schottky junctions, and utilizing a three top-gate architecture, transistor-level reconfiguration is enabled, expanding device functionality and providing additional logical inputs. The demonstrated material system and logic gates show high compatibility with state-of-the-art complementary metal-oxide semiconductor technology, potentially paving the way for future adaptive computing systems.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Pei Tang, Wuyang Tan, Fangzhou Li, Shan Xue, Yihui Ma, Pengwei Jing, Yanghui Liu, Jian Zhu, Xingbin Yan
Summary: Supercapacitor diode (CAPode) is a novel device that integrates ion diode functionality into a conventional electrical double-layer capacitor. It has potential applications in emerging fields and can achieve high charge storage and rectification properties through spinel ZnCo2O4's ion-selective surface redox reaction. Furthermore, it can be used in logic gate applications to realize logic operations. This research expands the types of CAPodes and provides a train of thought for constructing high-performance capacitive ionic diodes.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Sung-Wei Huang, Jenn-Gwo Hwu
Summary: In this study, the steady-state and transient behavior of metal-insulator-semiconductor tunnel diodes with high-low (H/L) oxide layers were investigated through experiments and simulations. The use of H/L oxide layers was found to reduce leakage or tunneling current at reverse bias by reducing minority carrier density near the gate edge. Characteristics of devices with various parameters were studied to identify conditions for tunneling current reduction, leading to enhanced transient current and capacitance change. The simulation confirmed the observed phenomena, including the existence of lateral electron current flow reducing minority carrier density near the gate edge. A memory operation using the H/L device showed improved read current and stable performance, making it a potential future volatile memory application.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Multidisciplinary Sciences
Roberto Rosati, Ioannis Paradisanos, Libai Huang, Ziyang Gan, Antony George, Kenji Watanabe, Takashi Taniguchi, Laurent Lombez, Pierre Renucci, Andrey Turchanin, Bernhard Urbaszek, Ermin Malic
Summary: In this study, the existence of bound charge transfer (CT) excitons at the interface of hBN-encapsulated lateral MoSe2-WSe2 heterostructures was investigated. The theoretical prediction was compared with experimental measurements, confirming the presence of low-energy CT excitons. These excitons exhibit small binding energies and large dipole moments, making them promising for optoelectronic applications.
NATURE COMMUNICATIONS
(2023)
Article
Automation & Control Systems
Jing Zhu, Siyuan Yu, Guichuang Zhu, Weifeng Sun, Yunqi Wang, Yangyang Lu, Yunwu Zhang, Sen Zhang, Yan Gu, Nailong He
Summary: This article introduces a new freewheeling circuit with JFET structure to replace high voltage diodes, reducing reverse recovery charge and peak reverse recovery current. Additionally, a deadtime control circuit is developed to optimize freewheeling loss. The new devices and circuits are compatible with traditional monolithic IC technology without additional processes.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Shania Rehman, Muhammad Asghar Khan, Honggyun Kim, Harshada Patil, Jamal Aziz, Kalyani D. Kadam, Malik Abdul Rehman, Muhammad Rabeel, Aize Hao, Karim Khan, Sungho Kim, Jonghwa Eom, Deok-kee Kim, Muhammad Farooq Khan
Summary: To simplify in-memory computing circuits, researchers have developed a single device that can simultaneously perform multiple logic gates and memory behaviors. This device, made of oxygen plasma-treated gallium selenide, exhibits resistive switching behavior and can achieve high stability and versatility. By adjusting gate voltages, the device can switch between NAND/NOR and AND/NAND logic gates, making it a promising solution for emerging neuromorphic computing applications.
Article
Automation & Control Systems
Han Xu, Gaofei Tang, Jin Wei, Zheyang Zheng, Kevin J. Chen
Summary: This article introduces a GaN gate driver based on a p-GaN gate power HEMT platform, featuring overcurrent protection and undervoltage lockout circuits, with characteristics including rail-to-rail output voltage, suppressed gate ringing, and tunable driving speed. The OC protection and UVLO circuit are designed to provide timely and reliable protections, taking into account the switching speed and threshold voltage of GaN power devices.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Wonsik Choi, Guoqiang Zhang, Hsien Chih Huang, Parsian Katal Mohseni, Chen Zhang, Jeong Dong Kim, Xiuling Li
Summary: This study demonstrates the monolithic formation of lateral p-n junctions in GaAs nanowires on a planar substrate through Au-assisted vapor-liquid-solid selective lateral epitaxy. The p-n junctions formed exhibit good rectification performance and a high minority carrier diffusion length.
Article
Engineering, Electrical & Electronic
Zepeng Li, Kunfeng Zhu, Xingfa Huang, Jianming Zhao, Kaikai Xu
Summary: A low voltage all silicon microdisplay based on MOS-like gate-control all-Silicon LED is presented, which is designed with a PN alternate structure and polysilicon gate control electrode for high luminous intensity and low operating voltage.
IEEE PHOTONICS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Ajit Kanale, Aditi Agarwal, B. Jayant Baliga, Subhashish Bhattacharya
Summary: This letter discusses an experimental demonstration of a SiC monolithic reverse blocking transistor (MRBT) for current source inverters (CSIs). The proposed device combines a SiC JBS diode with a SiC power MOSFET, creating a SiC-based unipolar single-chip three-terminal transistor with reverse blocking capability. The measured characteristics of a 4H-SiC MRBT, fabricated in a commercial six-inch wafer foundry, are presented, showing promising performance for CSI applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Jen Hao Chen, Kung Chu Chen, Jenn Gwo Hwu
Summary: A multilevel open-circuit voltage sensor was developed based on the coupling mechanism between Al/SiO2/Si(p) metal-insulator-semiconductor tunneling diodes, achieving multiple levels of V-out-V-in curves and proposing a novel concept of logic gates. A 2-D TCAD simulation was implemented to confirm the feasibility of this concept, which is believed to overcome the complexity of conventional CMOS circuit and be beneficial for logic computation on electronics chip in the future.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Seong Hyun Lee, Sang Hoon Kim, Sungyeop Jung, Jeong Woo Park, Tae Moon Roh, Wangjoo Lee, Dongwoo Suh
Summary: Selective epitaxial lateral overgrowth (ELO) technique is used to fabricate a local SOI platform on conventional silicon wafers and implement reconfigurable FETs with three gates. The technique provides high crystallinity and sound performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Bennett Smith, Md. Ataul Mamun, Benjamin Horstmann, Umit Ozgur, Vitaliy Avrutin
Summary: This paper presents the design and experimental validation of NEMS-based logic gates using multi-gate relays, which can operate in harsh conditions. The effectiveness of the method is confirmed through optimization of relay structures and electrical tests.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2023)
Article
Engineering, Electrical & Electronic
Ranajoy Bhattacharya, Jin-Woo Han, Jim Browning, M. Meyyappan
Summary: A new complementary vacuum field emission device structure is proposed in this study, where a freely moving double-clamped cantilever is used as the source electrode with electron-emitting cathode formed on the source for n-type device and on the drain for p-type device. Multiphysics simulation shows that complementary current-voltage characteristics are obtained only with Fowler-Nordheim tunneling electron transport.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Yun Shu, Qianrui Li, Jing Xia, Ping Lai, Yonghong Zhao, Yan Zhou, Xiaoxi Liu, Guoping Zhao
Summary: Due to their stability and mobility, magnetic skyrmions are being considered for their potential as information carriers in racetrack memory and spintronic devices. This study focuses on the effect of barriers at the edges of a Co/Pt bilayer racetrack, caused by a higher magnetic anisotropy due to attached hard magnetic materials. The presence of a rectangular notch on one side of the boundary barrier increases the longitudinal velocity of the skyrmion and enriches its dynamics. The research results also demonstrate the implementation of logic gates and a diode based on the dynamic behaviors of skyrmions, showing potential for the design of non-volatile spintronic devices with multiple functions and low energy consumption.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2023)
Article
Chemistry, Applied
Satoshi Watanabe, Motoharu Fujisaki, Kazuki Murai, Mutsuyoshi Matsumoto
JOURNAL OF OLEO SCIENCE
(2018)
Article
Multidisciplinary Sciences
Satoshi Watanabe, Hiroshi Era, Masashi Kunitake
SCIENTIFIC REPORTS
(2018)
Article
Chemistry, Multidisciplinary
Yuta Okamoto, Masaru Tanioka, Atsuya Muranaka, Kazunori Miyamoto, Tetsuya Aoyama, Xingmei Ouyang, Shinichiro Kamino, Daisuke Sawada, Masanobu Uchiyama
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2018)
Article
Chemistry, Multidisciplinary
Satoshi Watanabe, Ryota Urata, Tetsuya Sato, Shintaro Ida, Masashi Kunitake
CRYSTAL GROWTH & DESIGN
(2019)
Article
Nanoscience & Nanotechnology
Yeon Ui Lee, Olivier P. M. Gaudin, KwangJin Lee, Eunyoung Choi, Virginie Placide, Kazuto Takaishi, Tsuyoshi Muto, Pascal Andre, Atsuya Muranaka, Masanobu Uchiyama, Fabrice Mathevet, Tetsuya Aoyama, JeongWeon Wu, Anthony D'Aleo, Jean-Charles Ribierre
Article
Chemistry, Applied
Jae-Young Lee, Tetsuya Aoyama, Masanobu Uchiyama, Shinya Matsumoto
Article
Chemistry, Multidisciplinary
Yasuhiro F. Miura, Hironari Akiyama, Naoki Sugimoto, Yoshiya Akagi, Tetsuya Aoyama, Hidenobu Shiroishi, Mitsuo Takahashi
Article
Chemistry, Multidisciplinary
Satoshi Watanabe, Kenji Kojio, Masashi Kunitake
Article
Chemistry, Analytical
Hinako Hashimoto, Kyosei Goto, Kouhei Sakata, Satoshi Watanabe, Tomoyuki Kamata, Dai Kato, Osamu Niwa, Eisuke Kuraya, Taisei Nishimi, Mitsunobu Takemoto, Masashi Kunitake
ANALYTICAL CHEMISTRY
(2020)
Article
Chemistry, Multidisciplinary
Satoshi Watanabe, Kazuki Arikawa, Makoto Uda, Syuji Fujii, Masashi Kunitake
Summary: By remote control, the forward/backward motion and rotation of ships can be controlled by irradiating with 808 or 980 nm near-infrared light. Nanoparticles are incorporated into desired locations of the gels for selective heating. The temperature gradient generated by photothermal conversion can produce Marangoni propulsion force to move the ships in desired directions.
Article
Chemistry, Multidisciplinary
Satoshi Watanabe, Taiki Hayashida, Masaru Iwai, Yusuke Inomata, Masashi Kunitake, Tetsuya Kida
Summary: We demonstrate the fabrication of millimeter-sized single crystals of 0D-Cs4PbBr6 using a supersaturated solution of organic solvents without HBr(aq). By dissolving CsBr in ethylene glycol (EG) mixed with dimethyl sulfoxide, and using PbBr2 as the other precursor, Cs4PbBr6 was selectively formed. The solubility curve of Cs4PbBr6 in a mixed solvent containing 20 vol % EG was obtained by visually observing dissolution and crystal precipitation while changing the temperature, showing an upper critical solution phenomenon.
Article
Chemistry, Multidisciplinary
Toshihiko Tanaka, Yasuhiro F. Miura, Tetsuya Aoyama, Kazunori Miyamoto, Yoshiya Akagi, Masanobu Uchiyama, Eiji Osawa
Summary: The enigmatic self-assembling ability of nanodiamond particles has been discovered, leading to the synthesis of diamond-rich crystalline nanosheets.
Article
Materials Science, Multidisciplinary
Jean-Charles Ribierre, Zhao Li, Xiao Liu, Emmanuelle Lacaze, Benoit Heinrich, Stephane Mery, Piotr Sleczkowski, Yiming Xiao, Frederic Lafolet, Daisuke Hashizume, Tetsuya Aoyama, Masanobu Uchiyama, Jeong Weon Wu, Elena Zaborova, Frederic Fages, Anthony D'Aleo, Fabrice Mathevet, Chihaya Adachi
JOURNAL OF MATERIALS CHEMISTRY C
(2019)
Article
Chemistry, Applied
Satoshi Watanabe, Taiga Tominaga, Mutsuyoshi Matsumoto
JOURNAL OF OLEO SCIENCE
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Tetsuya Aoyama, Hirokazu Tanaka, Yusuke Tajima
ORGANIC PHOTONIC MATERIALS AND DEVICES XX
(2018)
