4.8 Article

Split-Gate Organic Field Effect Transistors: Control Over Charge Injection and Transport

期刊

ADVANCED MATERIALS
卷 22, 期 41, 页码 4649-4653

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201001509

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资金

  1. National Science Foundation (NSF-DMR) [0602280]
  2. NNIN network
  3. Division Of Materials Research
  4. Direct For Mathematical & Physical Scien [0602280] Funding Source: National Science Foundation

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A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.

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