期刊
ADVANCED MATERIALS
卷 22, 期 41, 页码 4649-4653出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201001509
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资金
- National Science Foundation (NSF-DMR) [0602280]
- NNIN network
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0602280] Funding Source: National Science Foundation
A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.
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