期刊
ADVANCED MATERIALS
卷 21, 期 2, 页码 222-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200703168
关键词
-
类别
资金
- National Creative Research Initiative Project
- Korea Science and Engineering Foundations (KOSEF) [R16-2004-004-01001-0]
- Ministry of Science and Technology (MOST) [ROA-2007-000-10014-0]
A novel method for shaping and positioning ZnO nanoarchitectures using conventional lithography and catalyst-free metal organic vapor-phase epitaxy is demonstrated. Nanowalls and nanotubes of desired shapes and arrangements can be grown heteroepitaxially on Si substrates, and their electron-emission characteristics were optimized by changing their diameter and spacing. This method can be readily expanded to create many artificial 1 D and 2D structures, as required for various device applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据