期刊
ADVANCED MATERIALS
卷 21, 期 46, 页码 4701-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200900995
关键词
-
类别
资金
- European NODE [015783]
- DFG [GO 704/5-1]
A bottom-imprint method to fabricate high-quality Si [100] nanowire arrays is described (see figure). This new approach combines the functions of a highly ordered anodic aluminum oxide (AAO) template that acts as both a stamp and a template. Vertically aligned, Al-catalyzed Si nanowire (NW) arrays are grown epitaxially on the Si substrate with a narrow size distribution.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据