Atomistic Origin of the Enhanced Crystallization Speed and n-Type Conductivity in Bi-doped Ge-Sb-Te Phase-Change Materials

Influence of bismuth on the optical properties of Ge2Sb2Te5 thin films

(2014) H. Ph. Nguyen et al.   SEMICONDUCTORS

Enhanced broadband near-infrared luminescence in Bi-doped glasses by co-doping with Ag

(2013) Beibei Xu et al.   JOURNAL OF APPLIED PHYSICS

Thermal properties of phase change material Ge2Sb2Te5 doped with Bi

(2013) A. Sherchenkov et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Structural insights into the formation and evolution of amorphous phase-change materials

(2013) J. M. Skelton et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Magnetic Contrast in Phase-Change Materials Doped with Fe Impurities

(2012) Yan Li et al.   ADVANCED MATERIALS

Magnetic Properties of Crystalline and Amorphous Phase-Change Materials Doped with 3dImpurities

(2012) Wei Zhang et al.   ADVANCED MATERIALS

Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry

(2012) J. Orava et al.   NATURE MATERIALS

A new study on bismuth doped oxide glasses

(2012) Wenbin Xu et al.   OPTICS EXPRESS

Nucleus-driven crystallization of amorphous Ge2Sb2Te5: A density functional study

(2012) J. Kalikka et al.   PHYSICAL REVIEW B

Breaking the Speed Limits of Phase-Change Memory

(2012) D. Loke et al.   SCIENCE

Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials

(2011) Konstantin B. Borisenko et al.   ACTA MATERIALIA

Enhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation

(2011) Eunae Cho et al.   APPLIED PHYSICS LETTERS

Anomalous second ferromagnetic phase transition as a signature of spinodal decomposition in Fe-doped GeTe diluted magnetic semiconductor

(2011) F. Tong et al.   APPLIED PHYSICS LETTERS

Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5

(2011) Eunae Cho et al.   JOURNAL OF APPLIED PHYSICS

From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials

(2011) Toshiyuki Matsunaga et al.   NATURE MATERIALS

Intrinsic complexity of the melt-quenched amorphous Ge2Sb2Te5memory alloy

(2011) M. Krbal et al.   PHYSICAL REVIEW B

Structural role of vacancies in the phase transition of Ge2Sb2Te5memory materials

(2011) T. H. Lee et al.   PHYSICAL REVIEW B

Ab InitioComputer Simulation of the Early Stages of Crystallization: Application toGe2Sb2Te5Phase-Change Materials

(2011) T. H. Lee et al.   PHYSICAL REVIEW LETTERS

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Nanoscale Phase Separation and Building Blocks of Ge2Sb2Te5N and Ge2Sb2Te5N2Thin Films

(2009) Konstantin B. Borisenko et al.   CHEMISTRY OF MATERIALS

Crystallization of Bi Doped Sb8Te2

(2009) Robert E. Simpson et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Influence of Silicon Doping on the Properties of Sputtered Ge2Sb2Te5Thin Film

(2009) Seong-Min Jeong et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change materialGe2Sb2Te5

(2009) J. Akola et al.   PHYSICAL REVIEW B

Synthesis and Characteristics of a Phase-Change Magnetic Material

(2008) Wen-Dong Song et al.   ADVANCED MATERIALS

Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

(2008) W. J. Wang et al.   APPLIED PHYSICS LETTERS

Reduction in crystallization time of Sb:Te films through addition of Bi

(2008) R. E. Simpson et al.   APPLIED PHYSICS LETTERS

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

(2008) J. Hegedüs et al.   NATURE MATERIALS