4.8 Article

Solution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistors

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 24, 期 14, 页码 2057-2063

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201303378

关键词

thin-film transistors; solution process; ambipolar; bulk heterojunctions; inverters

资金

  1. National Science Council (NSC) of Taiwan [NSC100-2628-M-008-004, NSC 101-2113-M008-005]
  2. National Tsing-Hua University, Academia Sinica
  3. Korea government (MSIP) [2011-0007730]
  4. Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT & Future Planning, Korea [2013M3A6A5073175]
  5. National Research Foundation of Korea [2013M3A6A5073175] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Solution-processed small-molecule bulk heterojunction (BHJ) ambipolar organic thin-film transistors are fabricated based on a combination of [2-phenylbenzo[d,d ']thieno[3,2-b;4,5-b ']dithiophene (P-BTDT) : 2-(4-n-octylphenyl)benzo[d,(d) under bar ']thieno[3,2-b;4,5-b']dithiophene (OP-BTDT)] and C-60. Treating high electrical performance vacuum-deposited P-BTDT organic semiconductors with a newly developed solution-processed organic semiconductor material, OP-BTDT, in an optimized ratio yields a solution-processed p-channel organic semiconductor blend with carrier mobility as high as 0.65 cm(2) V-1 s(-1). An optimized blending of P-BTDT:OP-BTDT with the n-channel semiconductor, C-60, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm(2) V-1 s(-1), respectively. Furthermore, a complementary-like inverter composed of two ambipolar thin-film transistors is demonstrated, which achieves a gain of 115.

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