4.8 Article

Probe-Based Electro-Oxidative Lithography of OTS SAMs Deposited onto Transparent ITO Substrates

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 22, 期 20, 页码 4376-4382

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201200673

关键词

self-assembled monolayers; electro-oxidative nanolithography; indium tin oxide (ITO); scanning Kelvin probe microscopy; n-octadecyltrichlorosilane (OTS)

资金

  1. German Federal Ministry of Education and Research
  2. Universita degli Studi di Milano (PhD school in Chemical Sciences)

向作者/读者索取更多资源

Transparent conductive oxides like indium tin oxide (ITO) play a pivotal role in a wide range of innovative applications, such as new generations of solar cells. In many of these applications the tailoring of surface properties on the nanometer scale represents a highly desirable target. The local oxidation of self-assembled monolayers (SAMs) using a scanning probe is a promising technique to achieve surface modifications on the nanometer scale. So far, electro-oxidative lithography of SAMs has been reported mainly on Si wafers while there are no previous reports on transparent oxides. Here, we report the oxidative lithography of n-octadecyltrichlorosilane (OTS) SAM deposited onto an ITO layer. A local overoxidation of the substrate is observed while the simultaneously occurring monolayer oxidation is indirectly confirmed by the site-selective deposition of silver nanoparticles onto electro-oxidized areas. The process of lithography is compared to that on OTS-Si substrates and its mechanism is systematically investigated by means of scanning Kelvin probe microscopy (SKPM).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据