Temperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and High-Temperature Electronics

标题
Temperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and High-Temperature Electronics
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 10, Pages 1843-1849
出版商
Wiley
发表日期
2011-04-04
DOI
10.1002/adfm.201002563

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started