期刊
ADVANCED FUNCTIONAL MATERIALS
卷 20, 期 23, 页码 4146-4151出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201000739
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资金
- Natural Sciences and Engineering Research Council of Canada [355628-08, 381527-09]
- Nano-Quebec Biosensor Program
In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defect-free, non-tapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a single InN nanowire is analyzed, which exhibits, for the first time, a very narrow (similar to 13 meV) spectral linewidth, a clear band filling effect with the increase of excitation power, and a significant red shift of the peak energy with increasing temperature. Detailed analysis confirms the InN nanowire has a very low residual doping of similar to 1 x 10(16) cm(-3), or less. It is further suggested that there is a small, or negligible level of electron accumulation at the lateral nonpolar surfaces of nearly intrinsic InN nanowires, which is in direct contrast to the commonly observed surface electron accumulation of n-type degenerate InN.
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