Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

标题
Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 19, Issue 8, Pages NA-NA
出版商
Wiley
发表日期
2009-04-21
DOI
10.1002/adfm.200990031

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