Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices

标题
Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 18, Issue 12, Pages 1832-1839
出版商
Wiley
发表日期
2008-06-11
DOI
10.1002/adfm.200701430

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