Low leakage of In0.83Ga0.17As photodiode with Al2O3/SiNx stacks - Peeref

标题

Low leakage of In0.83Ga0.17As photodiode with Al2O3/SiNx stacks

作者

关键词

InGaAs photodiode, Leakage current, Al, 2, O, 3, ALD

出版物

INFRARED PHYSICS & TECHNOLOGY

Volume 71, Issue -, Pages 272-276

出版商

Elsevier BV

发表日期

2015-05-03

DOI

10.1016/j.infrared.2015.04.003

向作者/读者发起求助以获取更多资源

Protocol

Reagent

Reprint

联系作者

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

© Peeref 2019-2024. All rights reserved.