4.7 Article

On chemical order and interfacial segregation in γ′ (AlAg2) precipitates

期刊

ACTA MATERIALIA
卷 69, 期 -, 页码 224-235

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2014.01.032

关键词

Aluminium alloys; Long-range order; Interface segregation; Stacking faults; Ledgewise growth

资金

  1. Australian Research Council through the Centre of Excellence

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A detailed study has been carried out on gamma' (AlAg2) precipitates in Al-Ag and Al-Ag-Cu alloys to reconcile the conflicting reports on chemical ordering and stacking faults in this phase. High-angle annular dark-field scanning transmission electron microscopy and convergent beam electron diffraction show no indication of chemical ordering on alternate basal planes of gamma' precipitates in alloys aged at 473 K for 2-23 h. Precipitates were visible as Ag-rich regions with 1-13 face-centred cubic (fcc) -> hexagonal close-packed stacking faults, corresponding to gamma' platelets with thicknesses ranging from 0.69 to 6.44 nm. There were no systematically absent thicknesses. Growth ledges with a riser height equal to the c-lattice parameter (0.46 nm) were directly observed for the first time. Genuine stacking faults within the precipitates were extremely rare and only observed in thicker precipitates. In precipitates with 1-3 stacking faults there was also substantial Ag in the surrounding fcc layers of the matrix, indicating that Ag strongly segregated to the broad, planar precipitate matrix interfaces. This segregation is responsible for previous reports of stacking faults in gamma' precipitates. The results indicate that the early stages of gamma' precipitate growth are interfacially controlled. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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