期刊
ACTA MATERIALIA
卷 60, 期 4, 页码 1503-1513出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2011.11.047
关键词
Dislocation; Interfaces; Slip transmission; Atomistic modeling
资金
- US Department of Energy, Office of Science, Office of Basic Sciences
- LDRD-ER20110573
Interfaces with relatively low shear strengths can be strong barriers to slip transmission because of core spreading of the dislocation within the interface. Using atomistic modeling and elasticity-based calculations we have studied the influence of interface shear strength on the slip transmission of a single dislocation across fcc/bcc interfaces. Tunable interatomic potentials were employed to vary the interface shear strength for the same interface crystallography. The results show that the slip transmission barrier increases with decreasing shear strength of the interface. The results reveal a mechanism for the variations in ultra-high strengths observed in nanoscale fcc/bcc multilayers. Published by Elsevier Ltd. on behalf of Acta Materialia Inc.
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