Real-time control of AlN incorporation in epitaxial Hf1−xAlxN using high-flux, low-energy (10–40eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target
Real-time control of AlN incorporation in epitaxial Hf1−xAlxN using high-flux, low-energy (10–40eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target
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