期刊
ACTA MATERIALIA
卷 58, 期 20, 页码 6565-6574出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2010.06.038
关键词
Wetting; Interface; Surface energy; Kinetics; Marangoni convection
Wetting of Si single crystals by pure copper has been studied using the dispensed drop technique under high vacuum at 1100 C. At this temperature copper dissolved large quantities of Si during spreading. CuSi droplets presaturated in silicon were also used to obtain non-reactive spreading. From the results obtained the different contributions to dissolutive wetting were determined. Moreover, a simple analytical model was formulated for analysing the influence on wetting of the interfacial atomic processes and of Si transport in the liquid. It is seen that, under our experimental conditions, solute transport by Marangoni convection controls the spreading kinetics. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据