Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

出版年份 2013 全文链接

标题

作者

关键词

出版物

Volume 7, Issue 10, Pages 9106-9114

出版商

American Chemical Society (ACS)

发表日期

2013-09-09

DOI

10.1021/nn403715p

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