Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer

标题
Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer
作者
关键词
-
出版物
ACS Nano
Volume 6, Issue 12, Pages 10893-10900
出版商
American Chemical Society (ACS)
发表日期
2012-11-14
DOI
10.1021/nn304315z

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