期刊
ACS NANO
卷 6, 期 1, 页码 583-591出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn204452e
关键词
doped semiconductor nanocrystals; energy transfer; transient absorption; luminescence quantum yield; exciton dynamics
类别
资金
- Welch Foundation [A-1639]
Dynamics of energy transfer and charge carrier localization in Mn-doped CdS/ZnS core/shell nanocrystals correlated with doping location and concentration are studied via transient absorption measurement of exciton relaxation dynamics. The strong dependence of exciton-Mn energy transfer rate on doping location was directly resolved In the transient bleach recovery and electron intraband absorption data by using layer-by-layer synthesized Mn-doped nanocrystals. With 1.2 nm decrease in doping radius in the ZnS shell, energy transfer rate increases by 6 fold. We identified that hole trapping is the major competing process that inhibits the energy transfer in Mn-doped CdS/ZnS nanocrystals. From the branching ratio of the energy transfer and hole trapping, combined with luminescence quantum yield measurement, we also obtained doping location-dependent radiative relaxation quantum yield of Mn2+ ions that is as high as 0.95.
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