4.8 Article

Graphene Oxide as a Monoatomic Blocking Layer

期刊

ACS NANO
卷 6, 期 9, 页码 8022-8029

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn302628q

关键词

graphene oxide; molecular electronics; vertical devices; barrier layer; molecular interfacing; X-ray reflectivity

资金

  1. Danish-Chinese Center for Molecular Nano-electronics
  2. Danish National Research Foundation
  3. Sino-Danish Center for Research and Education
  4. Danish Agency for Science, Technology and Innovation [10-082711]
  5. National Natural Science Foundation of China [60911130231]
  6. DANSCATT

向作者/读者索取更多资源

Monolayer graphene oxide (mGO) is shown to effectively protect molecular thin films from reorganization and function as an atomically thin barrier for vapor-deposited Ti/Al metal top electrodes. Fragile organic Langmuir-Blodgett (LB) films of C-22 fatty acid cadmium salts (cadmium(II) behenate) were covered by a compressed mosaic LB film of mGO flakes. These hybrid LB films were examined with atomic force microscopy (AFM) and X-ray reflectivity, both with and without the metal top electrodes. While the AFM enabled surface and morphology analysis, the X-ray reflectivity allowed for a detailed structural depth profiling of the organic film and mGO layer below the metal top layers. The structure of the mGO-protected LB films was found to be perfectly preserved; in contrast, it has previously been shown that metal deposition completely destroys the first two LB layers of unprotected films. This study provides dear evidence of the efficient protection offered by a single atomic layer of GO.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据