Air-Stable Conversion of Separated Carbon Nanotube Thin-Film Transistors from p-Type to n-Type Using Atomic Layer Deposition of High-κ Oxide and Its Application in CMOS Logic Circuits

标题
Air-Stable Conversion of Separated Carbon Nanotube Thin-Film Transistors from p-Type to n-Type Using Atomic Layer Deposition of High-κ Oxide and Its Application in CMOS Logic Circuits
作者
关键词
-
出版物
ACS Nano
Volume 5, Issue 4, Pages 3284-3292
出版商
American Chemical Society (ACS)
发表日期
2011-03-18
DOI
10.1021/nn2004298

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