期刊
ACS NANO
卷 5, 期 3, 页码 1984-1989出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn103042m
关键词
scanning tunneling microscopy; dangling bonds; silicon; Schottky; titanium; suicide
类别
资金
- iCORE
- CIFAR
Titanium silicide (TiSi2) nanoscale Schottky contacts were prepared on hydrogen-terminated n-type Si (100) surfaces. The Schottky contact created a region of upward band bending surrounding the TiSi2 contacts. The surface band bending was observed as a sloping surface depression using the scanning tunneling microscope. Scanning tunneling spectroscopy measurements also show shifted I/V data consistent with upward band bending. Charge control of dangling bonds was accomplished through a distance relationship between the dangling bond and the TiSi2 contact. The lowered chemical potential in the near contact region removes the ability of dangling bonds to become negatively charged while dangling bonds outside the close contact region remain fully charged. Methods to actively control dangling bond charge states are discussed.
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