Dopant-Induced Modifications of GaxIn(1–x)P Nanowire-Based p–n Junctions Monolithically Integrated on Si(111)

标题
Dopant-Induced Modifications of GaxIn(1–x)P Nanowire-Based p–n Junctions Monolithically Integrated on Si(111)
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 10, Issue 38, Pages 32588-32596
出版商
American Chemical Society (ACS)
发表日期
2018-08-30
DOI
10.1021/acsami.8b10770

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