Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor

标题
Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 6, Issue 24, Pages 22680-22686
出版商
American Chemical Society (ACS)
发表日期
2014-12-03
DOI
10.1021/am506805a

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