期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 17, 页码 8718-8723出版社
AMER CHEMICAL SOC
DOI: 10.1021/am402403x
关键词
OPV; ZnO; ALD; defects; stability
资金
- Korea Institute of Materials Science (KIMS)
A ripple-structured ZnO film as the electron-collecting layer (ECL) of an inverted organic photovoltaic (OPV) was modified by atomic layer deposition (ALD) to add a ZnO thin layer. Depositing a thin ZnO layer by ALD on wet-chemically prepared ZnO significantly increased the short-circuit current (J(sc)) of the OPV. The highest power conversion efficiency (PCE) of 7.96% with J(sc) of 17.9 mA/cm(2) was observed in the inverted OPV with a 2-nm-thick ALD-ZnO layer, which quenched electron-hole recombination at surface defects of ZnO ripples. Moreover, an ALD-ZnO layer thinner than 2 nm made the distribution of electrical conductivity on the ZnO surface more uniform, enhancing OPV performance. In contrast, a thicker ALD-ZnO layer (5 nm) made the two-dimensional distribution of electrical conductivity on the ZnO surface more heterogeneous, reducing the PCE. In addition, depositing an ALD-ZnO thin layer enhanced OPV stability and initial performance. We suggest that the ALD-ZnO layer thickness should be precisely controlled to fabricate high-performing OPVs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据