4.8 Article

Lead Sulfide Nanocrystal Quantum Dot Solar Cells with Trenched ZnO Fabricated via Nanoimprinting

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 9, 页码 3803-3808

出版社

AMER CHEMICAL SOC
DOI: 10.1021/am400443w

关键词

quantum dot solar cells; lead sulfide quantum dots; nanoimprinting; patterned ZnO; depleted heterojunction; nanostructured interface

资金

  1. Global Frontier R&D Program by the Center for Multiscale Energy Systems
  2. National Research Foundation (NRF) under the Ministry of Education, Science, and Technology [2011-0031566]
  3. KIMM
  4. NRF [2012-043865]
  5. Center for Advanced Solar Photophysics, an Energy Frontier Research Center
  6. US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences
  7. DOE [DE-AC36-08G028308]

向作者/读者索取更多资源

The improvement of power conversion efficiency, especially current density (J(sc)), for nanocrystal quantum dot based heterojunction solar cells was realized by employing a trenched ZnO film fabricated using nanoimprint techniques. For an optimization of ZnO patterns, various patterned ZnO films were investigated using electrical and optical analysis methods by varying the line width, interpattern distance, pattern height, and residual layer. Analyzing the features of patterned ZnO films allowed us to simultaneously optimize both the pronounced electrical effects as well as optical properties. Consequently, we achieved an enhancement in J(sc) from 7.82 to 12.5 mA cm(-2) by adopting the patterned ZnO with optimized trenched shape.

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