期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 8, 页码 3312-3316出版社
AMER CHEMICAL SOC
DOI: 10.1021/am4003793
关键词
ZnO/CdTe; ZnS; passivation; photoelectrochemical property
资金
- National Nature Science Foundation of China [51072049, 51102086]
- Research Fund for the Doctoral Program of Higher Education of China (RFDP) [20104208120004]
- NSF and ED of Hubei Province [2009CDA035, Z20091001, 2010BFA016, Q20101006]
- Wuhan Youth Chenguang Program of Science and Technology [2013070104010014]
The effect of a ZnS thin layer on the photoelectrochemical property of ZnO/CdTe nanocable arrays-on-indium tin oxide was systematically studied by the successive ion layer absorption and reaction (SILAR) of ZnS. The thickness of CdTe on bare ZnO/CdTe nanocable arrays was optimized to approximately 10 nm to achieve a saturated photocurrent density of 6.5 mA/cm(2). Significant photocurrent enhancement was achieved by gradually increasing the ZnS SILAR cycle number from 0 to 10. A type I band alignment with conduction and valence band offsets of 0.58 and 1.52 eV, respectively, was deduced for the CdTe/ZnS interface. The detailed microstructure of the CdTe/ZnS interface and the relationship between the photocurrent and the ZnS thickness indicated that ZnS not only serves as a barrier layer that prevents electron injection from CdTe to the electrolyte but also provides an effective tunneling channel for hole transfers to the electrolyte. A ZnO/CdTe/ZnS nanocable photoanode yielded a saturated photocurrent density of 13.8 mA/cm(2) when the thickness of ZnS was controlled to approximately 2 nm.
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