期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 22, 页码 11858-11864出版社
AMER CHEMICAL SOC
DOI: 10.1021/am403555c
关键词
CuInS2; quantum-dot sensitized TiO2 photoanodes; In2S3 buffer layer; CuxS quantum dots; Cu2S counter electrode
资金
- Natural Science Foundation of China [51072034, 51172042]
- Specialized Research Fund for the Doctoral Program of Higher Education [20110075130001]
- Science and Technology Commission of Shanghai Municipality [12 nm0503900, 13JC1400200]
- Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, Innovative Research Team in University [IRT1221]
- Program of Introducing Talents of Discipline to Universities [111-2-04]
CuInS2 quantum-dot sensitized TiO2 photoanodes with In2S3 buffer layer were in situ prepared via chemical bath deposition of In2S3, where the Cd-free In2S3 layer then reacted with TiO2/CuxS which employed a facile SILAR process to deposit CuxS quantum dots on TiO2 film, followed by a covering process with ZnS layer. Polysulfide electrolyte and Cu2S on FTO glass counter electrode were used to provide higher photovoltaic performance of the constructed devices. The characteristics of the quantum dots sensitized solar cells were studied in more detail by optical measurements, photocurrent-voltage performance measurements, and impedance spectroscopy. On the basis of optimal CuxS SILAR cycles, the best photovoltaic performance with power conversion efficiency (eta) of 1.62% (J(sc) = 6.49 mA cm(-2), V-oc = 0.50 V, FF = 0.50) under full one-sun illumination was achieved by using Cu2S counter electrode. Cu2S-FTO electrode exhibits superior electrocatalytic ability for the polysulfide redox reactions relative to that of Pt-FTO electrode.
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