Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance

标题
Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 5, Issue 15, Pages 6990-6995
出版商
American Chemical Society (ACS)
发表日期
2013-07-03
DOI
10.1021/am401128p

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